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| 2SJ588 Silicon P Channel MOS FET High Speed Switching ADE-208-802 (Z) 1st.Edition. June 1999 Features * Low on-resistance R DS =2.8 typ. (V GS = -10 V , I D = -50 mA) R DS =5.7 typ. (V GS = -4 V , I D = -50 mA) * 4 V gate drive device. Outline SPAK D 3 12 3 2 G 1. Source 2. Drain 3. Gate S 1 2SJ588 Absolute Maximum Ratings (Ta = 25C) Item Drain to source voltage Gate to source voltage Drain current Drain peak current Body-drain diode reverse drain current Channel dissipation Channel temperature Storage temperature Note: 1. PW 10 s, duty cycle 1% Symbol VDSS VGSS ID I D(pulse) I DR Pch Tch Tstg Note1 Ratings -30 20 -100 -400 -100 300 150 -55 to +150 Unit V V mA mA mA mW C C Electrical Characteristics (Ta = 25C) Item Drain to source breakdown voltage Gate to source breakdown voltage Gate to source leak current Zero gate voltege drain current Symbol V(BR)DSS V(BR)GSS I GSS I DSS Min -30 20 -- -- -1.3 -- -- 68 -- -- -- -- -- -- -- Typ -- -- -- -- -- 2.8 5.7 105 25 20 8 10 15 40 45 Max -- -- 5 -1 -2.3 3.3 7.9 -- -- -- -- -- -- -- -- Unit V V A A V mS pF pF pF ns ns ns ns Test Conditions I D = -100 A, VGS = 0 I G = 100 A, VDS = 0 VGS = 16 V, VDS = 0 VDS = -30 V, VGS = 0 I D = -10A, VDS = -5 V ID = -50 mA,VGS = -10 V Note 2 ID = -50 mA,VGS = -4 V Note 2 ID = -50 mA, V DS = -10 V Note 2 Gate to source cutoff voltage VGS(off) Static drain to source on state RDS(on) resistance Forward transfer admittance Input capacitance Output capacitance RDS(on) |yfs| Ciss Coss VDS = -10 V VGS = 0 f = 1 MHz I D = -50 mA, VGS = -10 V RL = 200 Reverse transfer capacitance Crss Turn-on delay time Rise time Turn-off delay time Fall time Note: t d(on) tr t d(off) tf 2. Pulse test See characteristics curves of 2SJ575 2 2SJ588 Main Characteristics Maximum Safe Operation Area -5 -2 -1.0 -0.5 -0.2 -0.1 -0.05 -0.02 -0.01 -0.005 Power vs. Temperature Derating 400 Pch (mW) I D (A) 300 10 s 100 s 1ms,10 ms DC Operation in this area is limited by RDS(on) Power Dissipation 200 Drain Current Op er at ion 100 0 50 100 150 Ta ( C) 200 -0.002 -0.001 Ta=25 C -0.0005 -0.05 -0.1 -0.2 -0.5 -1.0 -2 -5 -10 -20 -50 Ambient Temperature Drain to Source Voltage VDS (V) 3 2SJ588 Package Dimensions Unit: mm 4.2 Max 1.8 Max 3.2 Max 2.2 Max 0.45 0.1 14.5 Min 0.6 0.6 Max 0.4 0.1 1.27 1.27 Hitachi Code EIAJ JEDEC SPAK - - 2.54 4 2SJ588 Cautions 1. Hitachi neither warrants nor grants licenses of any rights of Hitachi's or any third party's patent, copyright, trademark, or other intellectual property rights for information contained in this document. Hitachi bears no responsibility for problems that may arise with third party's rights, including intellectual property rights, in connection with use of the information contained in this document. 2. Products and product specifications may be subject to change without notice. Confirm that you have received the latest product standards or specifications before final design, purchase or use. 3. Hitachi makes every attempt to ensure that its products are of high quality and reliability. However, contact Hitachi's sales office before using the product in an application that demands especially high quality and reliability or where its failure or malfunction may directly threaten human life or cause risk of bodily injury, such as aerospace, aeronautics, nuclear power, combustion control, transportation, traffic, safety equipment or medical equipment for life support. 4. Design your application so that the product is used within the ranges guaranteed by Hitachi particularly for maximum rating, operating supply voltage range, heat radiation characteristics, installation conditions and other characteristics. Hitachi bears no responsibility for failure or damage when used beyond the guaranteed ranges. Even within the guaranteed ranges, consider normally foreseeable failure rates or failure modes in semiconductor devices and employ systemic measures such as failsafes, so that the equipment incorporating Hitachi product does not cause bodily injury, fire or other consequential damage due to operation of the Hitachi product. 5. This product is not designed to be radiation resistant. 6. No one is permitted to reproduce or duplicate, in any form, the whole or part of this document without written approval from Hitachi. 7. Contact Hitachi's sales office for any questions regarding this document or Hitachi semiconductor products. Hitachi, Ltd. Semiconductor & Integrated Circuits. Nippon Bldg., 2-6-2, Ohte-machi, Chiyoda-ku, Tokyo 100-0004, Japan Tel: Tokyo (03) 3270-2111 Fax: (03) 3270-5109 URL NorthAmerica : http:semiconductor.hitachi.com/ Europe : http://www.hitachi-eu.com/hel/ecg Asia (Singapore) : http://www.has.hitachi.com.sg/grp3/sicd/index.htm Asia (Taiwan) : http://www.hitachi.com.tw/E/Product/SICD_Frame.htm Asia (HongKong) : http://www.hitachi.com.hk/eng/bo/grp3/index.htm Japan : http://www.hitachi.co.jp/Sicd/indx.htm For further information write to: Hitachi Europe GmbH Electronic components Group Dornacher Strae 3 D-85622 Feldkirchen, Munich Germany Tel: <49> (89) 9 9180-0 Fax: <49> (89) 9 29 30 00 Hitachi Europe Ltd. Electronic Components Group. Whitebrook Park Lower Cookham Road Maidenhead Berkshire SL6 8YA, United Kingdom Tel: <44> (1628) 585000 Fax: <44> (1628) 778322 Hitachi Asia Pte. Ltd. 16 Collyer Quay #20-00 Hitachi Tower Singapore 049318 Tel: 535-2100 Fax: 535-1533 Hitachi Asia Ltd. Taipei Branch Office 3F, Hung Kuo Building. No.167, Tun-Hwa North Road, Taipei (105) Tel: <886> (2) 2718-3666 Fax: <886> (2) 2718-8180 Hitachi Asia (Hong Kong) Ltd. Group III (Electronic Components) 7/F., North Tower, World Finance Centre, Harbour City, Canton Road, Tsim Sha Tsui, Kowloon, Hong Kong Tel: <852> (2) 735 9218 Fax: <852> (2) 730 0281 Telex: 40815 HITEC HX Hitachi Semiconductor (America) Inc. 179 East Tasman Drive, San Jose,CA 95134 Tel: <1> (408) 433-1990 Fax: <1>(408) 433-0223 Copyright (c) Hitachi, Ltd., 1998. All rights reserved. Printed in Japan. 5 |
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